总剂量辐照加固的功率VDMOS器件

基金项目:

国防科技重点实验室基金项目(9140C904010606)

详细信息

Total Dose Radiation Hardened Power VDMOS Device

1.
State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China Chengdu 610054;
2.
The No. 24 Institute of,China Electronics Technology Group Corporation,Nanping Chongqing 400060

摘要: 采用先形成P-body区再生长栅氧化层的新工艺流程和薄栅氧化层配合Si3N4-SiO2钝化层加固工艺,研制出一种抗总剂量辐照加固功率VDMOS器件。给出了该器件的常态参数和总剂量辐照的实验数据,通过和二维数值仿真比较,表明实验数据和仿真数据能较好吻合。对研制的功率VDMOS器件在X射线模拟源辐照总剂量972×103 rad (Si)下,阈值电压仅漂移-1 V。结果证明,工艺改善了功率VDMOS器件的抗总剂量辐照能力。
- 功率VDMOS器件 /
- 薄栅氧化层 /
- 阈值电压漂移 /
- 总剂量辐照
Abstract: A total dose radiation hardened power VDMOS device is fabricated by growing the thin gate SiO2 after the P-body diffusion and using a double passivation layer (Si3N4-SiO2). The experimental results are presented and fit 2D simulation. For the specified power VDMOS device, the threshold voltage shifts is only -1 V at a x-ray total dose of 972×103 rad (Si). It is demonstrated that the total dose radiation tolerance of the power VDMOS device are improved significantly.
- power VDMOS device /
- thin gate SiO2 /
- threshold voltage shift /
- total dose radiation