Abstract: In this paper, a PIN diode model is established through Technology Computer Aided Design (TCAD) device modeling, and a High-Power Microwave (HPM) coupling simulation circuit is built on a PIN limiter to simulate effects of HPM. The transient voltage response of the PIN limiter under different HPM frequencies are obtained by simulation, as well as the internal electric field, carrier and junction temperature distribution of the PIN diode. The simulation results show that the flat-top leakage negative voltage of PIN limiter decreases with the increase of HPM frequency, and the flat-top leakage forward voltage of PIN limiter decreases with the increase of HPM frequency. The limiting capability of the PIN limiter inside the PIN diode first increases and then decreases with the increase of the microwave frequency. When the HPM frequency is low, the internal lattice temperature accumulation of the PIN diode is concentrated at the interface of layer I. Therefore, the HPM damage sensitive position of the PIN limiter varies with frequency.