Ni/4H-SiC SBD电离辐照探测器的实验研究

Experiment Study of Ni/4H-SiC Schottky Diode Ionization Radiation Detector

摘要: 研制了Ni/4H-SiC肖特基二极管电离辐照探测器,并采用不同的辐照源进行了测试。实验结果表明,对于低能电子和γ射线辐照,该探测器都有比较灵敏的电流响应。经过1 Mrad(Si)的γ射线辐照后,探测器的信号电流没有明显退化;分别经过1 Mrad(Si)的γ射线和100 Mrad(Si)的1 MeV电子辐照后,0 V和-30 V辐照偏压下的探测器的暗电流仅有较轻微的退化。说明了该文研制的探测器具有暗电流低、灵敏度高和抗辐射容限高等优点,可以在强辐射环境中长时间应用。

Abstract: The Ni/4H-SiC Schottky diode ionization radiation detector was fabricated and measured with different radiation sources. Under radiation from 63Ni and gamma-ray, the detectors show sensitive current response. After 1 Mrad(Si) gamma-ray radiation, the signal current has no obvious degradation. After 1 Mrad(Si) gamma-ray and 100 Mrad(Si) electron radiation respectively, the dark current of detectors under different radiation bias voltage has slightly degradation. The resluts show that Ni/4H-SiC Schottky diode ionization radiation detector has low dark current, high sensitivity and high radiation hardness and can be applied in high radiation environment for a long time.