低噪声CMOS电荷敏放大器设计与研制

基金项目:

国家自然科学基金资助项目,编号:60072004

详细信息

Design and Fabrication of a Low-Noise CMOS Charge Sensitive Amplifier

School of Microelectronics and Solid-State Electronics,UEST of China Chengdu 610054

Funds:

The Project is supported by the Natural Science Foundation of China, No: 60072004

摘要: 提出了一种新的低噪声低功耗电荷敏感放大器设计方案。用EDA软件Cadence进行模拟,得到了满意的仿真结果:直流开环增益为82.9 dB,f-3dB为28 kHz,相位裕度为46.9°,低频下输出噪声频谱密度为1.5μV/Hz2。采用标准的3 mm P阱CMOS工艺进行了流片,测试结果与模拟情况相近。
- 低噪声 /
- 电荷放大器 /
- 低功耗设计 /
- 低电压
Abstract: A new design of low-noise low-power consumption charge sensitive amplifier is presented. Simulated by EDA software Cadence, the results obtained are satisfied. The DC open-loop gain is 82.9 dB with a 28 kHz -3 dB bandwidth and its phase margin is 46.9°. The maximum output noise spectral density is 1.5 μV/Hz2 at very low frequency. Using standard 3mm P-Well CMOS technology, the proposed amplifier is fabricated, and the measurement results are closed to the simulation.
- low-noise /
- charge amplifier /
- low power design /
- low voltage