Volume 39 Issue 6
May  2017
Article Contents
Article Navigation >  Journal of University of Electronic Science and Technology of China  > 2010  >  39(6): 934-939

JIN Zhao, ZHUANG Yi-qi, WANG Jiang-an, DU Yong-qian, QIAO Li-ping, ZHANG Chao. Design and Implementation of a Low Voltage High Efficiency Charge Pump for Passive UHF RFID[J]. Journal of University of Electronic Science and Technology of China, 2010, 39(6): 934-939. doi: 10.3969/j.issn.1001-0548.2010.06.027
Citation: JIN Zhao, ZHUANG Yi-qi, WANG Jiang-an, DU Yong-qian, QIAO Li-ping, ZHANG Chao. Design and Implementation of a Low Voltage High Efficiency Charge Pump for Passive UHF RFID[J]. Journal of University of Electronic Science and Technology of China, 2010, 39(6): 934-939. doi: 10.3969/j.issn.1001-0548.2010.06.027
shu

Design and Implementation of a Low Voltage High Efficiency Charge Pump for Passive UHF RFID

doi: 10.3969/j.issn.1001-0548.2010.06.027
  • 1.

    School of Microelectronics,Xidian University Xi'an 710071;

  • 2.

    School of Information Technology,Tibet Nationalities Institute Xianyang Shanxi 712082

  • Received Date: 2009-07-10
  • Rev Recd Date: 2010-04-13
  • Publish Date: 2010-12-15
  • A low voltage high efficiency charge pump circuit for passive UHF RFID is presented to increase the operating range of tags. The bias voltage supplied to the main charge pump by the bias circuit is raised by suppressing its load current using a diode connected MOSFET, which greatly reduces the threshold voltage drop in traditional charge pumps, suppresses the reverse leakage current and improves the sensitivity and power conversion efficiency. The charge pump has been fabricated in chartered 0.35 μm CMOS process. Measurement results show that a 275 mV minimum input level is required to generate 1.47 V power supply for 200 kΩ load and efficiency up to 26.2% is achieved. The maximum operating range of the RFID tag with this charge pump is 4.2 m. This design effectively contributes to the good performance of RFID chips.
  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索
Get Citation
PDF
XML

Article Metrics

Article views(3708) PDF downloads(66) Cited by()

Related
Proportional views

Design and Implementation of a Low Voltage High Efficiency Charge Pump for Passive UHF RFID

doi: 10.3969/j.issn.1001-0548.2010.06.027
  • 1. School of Microelectronics,Xidian University Xi'an 710071;
  • 2. School of Information Technology,Tibet Nationalities Institute Xianyang Shanxi 712082
  • Received Date: 2009-07-10
  • Rev Recd Date: 2010-04-13
  • Publish Date: 2010-12-15

Abstract: A low voltage high efficiency charge pump circuit for passive UHF RFID is presented to increase the operating range of tags. The bias voltage supplied to the main charge pump by the bias circuit is raised by suppressing its load current using a diode connected MOSFET, which greatly reduces the threshold voltage drop in traditional charge pumps, suppresses the reverse leakage current and improves the sensitivity and power conversion efficiency. The charge pump has been fabricated in chartered 0.35 μm CMOS process. Measurement results show that a 275 mV minimum input level is required to generate 1.47 V power supply for 200 kΩ load and efficiency up to 26.2% is achieved. The maximum operating range of the RFID tag with this charge pump is 4.2 m. This design effectively contributes to the good performance of RFID chips.

JIN Zhao, ZHUANG Yi-qi, WANG Jiang-an, DU Yong-qian, QIAO Li-ping, ZHANG Chao. Design and Implementation of a Low Voltage High Efficiency Charge Pump for Passive UHF RFID[J]. Journal of University of Electronic Science and Technology of China, 2010, 39(6): 934-939. doi: 10.3969/j.issn.1001-0548.2010.06.027
Citation: JIN Zhao, ZHUANG Yi-qi, WANG Jiang-an, DU Yong-qian, QIAO Li-ping, ZHANG Chao. Design and Implementation of a Low Voltage High Efficiency Charge Pump for Passive UHF RFID[J]. Journal of University of Electronic Science and Technology of China, 2010, 39(6): 934-939. doi: 10.3969/j.issn.1001-0548.2010.06.027
shu

    HTML

Catalog

    Journal Online

    Author's Notes

    Links

    Copyright © 《电子科技大学学报》编辑部

    Address: Room 350, central building, University of Electronic Science and Technology, No.4, Section 2, Jianshe North Road, Chengdu Tel: 028-83202308,83207559 Email: xuebao@uestc.edu.cn

    本系统由 北京仁和汇智信息技术有限公司 开发 

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return