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Article Navigation >  Journal of University of Electronic Science and Technology of China  > 2015  >  44(2): 190-194

HE Song-bai, CHEN Jin-hu, TONG Ren-bin, PENG Rui-min. Design of Linear High-Efficiency Power Amplifiers Based on Sweet Spot Effect[J]. Journal of University of Electronic Science and Technology of China, 2015, 44(2): 190-194. doi: 10.3969/j.issn.1001-0548.2015.02.005
Citation: HE Song-bai, CHEN Jin-hu, TONG Ren-bin, PENG Rui-min. Design of Linear High-Efficiency Power Amplifiers Based on Sweet Spot Effect[J]. Journal of University of Electronic Science and Technology of China, 2015, 44(2): 190-194. doi: 10.3969/j.issn.1001-0548.2015.02.005
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Design of Linear High-Efficiency Power Amplifiers Based on Sweet Spot Effect

doi: 10.3969/j.issn.1001-0548.2015.02.005
  • 1.

    School of Electronic Engineering,University of Electronic Science and Technology of China Chengdu 611731

  • Received Date: 2014-02-16
  • Rev Recd Date: 2014-04-17
  • Publish Date: 2015-04-15
  • This paper utilizes intermodulation distortion (IMD) sweet spot effect to solve the linear problem of high-efficient power amplifier (PA), so that PA can maintain high levels of both efficiency and linearity. IMD sweet spot is the result of interactions between circuit's small-signal nonlinear distortion (weak nonlinearity) determined by the PA quiescent operating point and large-signal distortion effects determined by the device current turn-on and current saturation (strong nonlinearity). The weak nonlinearity can be controlled by changing the gate bias. By seeking appropriate bias voltage for IMD sweet spot generated at the beginning of the transistor gain compression, PA can achieve high efficiency and good linearity. Based on the effect of sweet spot, a high-efficiency linear PA has been designed. Test results show that at center frequency of 2.2 GHz, 37.1 dBm output powers, 53.4% drain efficiency can be obtained, while the third-order intermodulation distortion (IMD3) and the fifth-order intermodulation distortion (IMD5) are less than -30 dBc.
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Design of Linear High-Efficiency Power Amplifiers Based on Sweet Spot Effect

doi: 10.3969/j.issn.1001-0548.2015.02.005
  • 1. School of Electronic Engineering,University of Electronic Science and Technology of China Chengdu 611731
  • Received Date: 2014-02-16
  • Rev Recd Date: 2014-04-17
  • Publish Date: 2015-04-15

Abstract: This paper utilizes intermodulation distortion (IMD) sweet spot effect to solve the linear problem of high-efficient power amplifier (PA), so that PA can maintain high levels of both efficiency and linearity. IMD sweet spot is the result of interactions between circuit's small-signal nonlinear distortion (weak nonlinearity) determined by the PA quiescent operating point and large-signal distortion effects determined by the device current turn-on and current saturation (strong nonlinearity). The weak nonlinearity can be controlled by changing the gate bias. By seeking appropriate bias voltage for IMD sweet spot generated at the beginning of the transistor gain compression, PA can achieve high efficiency and good linearity. Based on the effect of sweet spot, a high-efficiency linear PA has been designed. Test results show that at center frequency of 2.2 GHz, 37.1 dBm output powers, 53.4% drain efficiency can be obtained, while the third-order intermodulation distortion (IMD3) and the fifth-order intermodulation distortion (IMD5) are less than -30 dBc.

HE Song-bai, CHEN Jin-hu, TONG Ren-bin, PENG Rui-min. Design of Linear High-Efficiency Power Amplifiers Based on Sweet Spot Effect[J]. Journal of University of Electronic Science and Technology of China, 2015, 44(2): 190-194. doi: 10.3969/j.issn.1001-0548.2015.02.005
Citation: HE Song-bai, CHEN Jin-hu, TONG Ren-bin, PENG Rui-min. Design of Linear High-Efficiency Power Amplifiers Based on Sweet Spot Effect[J]. Journal of University of Electronic Science and Technology of China, 2015, 44(2): 190-194. doi: 10.3969/j.issn.1001-0548.2015.02.005
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