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Article Navigation >  Journal of University of Electronic Science and Technology of China  > 2007  >  36(4): 660-662,669

ZHANG De-yin, HUANG Da-gui, LI Jin-hua, DAN Di-di, DONG Zheng. Substrate Effects on Preparation of LiTaO3 Thin Films[J]. Journal of University of Electronic Science and Technology of China, 2007, 36(4): 660-662,669.
Citation: ZHANG De-yin, HUANG Da-gui, LI Jin-hua, DAN Di-di, DONG Zheng. Substrate Effects on Preparation of LiTaO3 Thin Films[J]. Journal of University of Electronic Science and Technology of China, 2007, 36(4): 660-662,669.
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Substrate Effects on Preparation of LiTaO3 Thin Films

  • 1.

    School of Eelectromechanics Engineering,University of Electronic Science and Technology of China Chengdu 610054;

  • 2.

    Aviation Engineering Institute,Civil Aviation Flight University of China Guanghan Sichuan 618307;

  • 3.

    Department of Information Science,Jiangsu Ploytechnic University,Changzhou Jiangsu 213016

  • Received Date: 2006-05-15
  • Publish Date: 2006-08-15
  • The sol-gel derived LiTaO3 thin films were prepared on the substrates of N-type Si (100), P-type Si (111), Quartz, Pt/TiO2/SiO2/Si (100), and Nickel, respectively. The properties of LiTaO3 thin films were measured using XRD and SEM. Experimental results show the doped epoxy resin can improve the uniformity of LiTaO3 thin films and the adhesiveness between LiTaO3 thin films and the substrates. The relation between thin film thickness and substrate effect was studied. The intensive peak of XRD of the Nickel substrate does not appear again when the thickness of LiTaO3 thin film excesses 0.2 μm, and the result shows that the substrates have important influence on the initial crystallization of the LiTaO3 thin film. The XRD results also show only polycrystalline LiTaO3 thin films can be prepared on N-type Si (100), P-type Si (111), and Quartz substrate. The LiTaO3 thin films deposited on the Pt/TiO2/SiO2/Si (100) substrate has a strong (012) plane preferred orientation. The LiTaO3 thin films deposited on the Nickel substrate has a perfect C-axis preferred orientation with a large C-axis orientation degree factor of 0.082.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Substrate Effects on Preparation of LiTaO3 Thin Films

  • 1. School of Eelectromechanics Engineering,University of Electronic Science and Technology of China Chengdu 610054;
  • 2. Aviation Engineering Institute,Civil Aviation Flight University of China Guanghan Sichuan 618307;
  • 3. Department of Information Science,Jiangsu Ploytechnic University,Changzhou Jiangsu 213016
  • Received Date: 2006-05-15
  • Publish Date: 2006-08-15

Abstract: The sol-gel derived LiTaO3 thin films were prepared on the substrates of N-type Si (100), P-type Si (111), Quartz, Pt/TiO2/SiO2/Si (100), and Nickel, respectively. The properties of LiTaO3 thin films were measured using XRD and SEM. Experimental results show the doped epoxy resin can improve the uniformity of LiTaO3 thin films and the adhesiveness between LiTaO3 thin films and the substrates. The relation between thin film thickness and substrate effect was studied. The intensive peak of XRD of the Nickel substrate does not appear again when the thickness of LiTaO3 thin film excesses 0.2 μm, and the result shows that the substrates have important influence on the initial crystallization of the LiTaO3 thin film. The XRD results also show only polycrystalline LiTaO3 thin films can be prepared on N-type Si (100), P-type Si (111), and Quartz substrate. The LiTaO3 thin films deposited on the Pt/TiO2/SiO2/Si (100) substrate has a strong (012) plane preferred orientation. The LiTaO3 thin films deposited on the Nickel substrate has a perfect C-axis preferred orientation with a large C-axis orientation degree factor of 0.082.

ZHANG De-yin, HUANG Da-gui, LI Jin-hua, DAN Di-di, DONG Zheng. Substrate Effects on Preparation of LiTaO3 Thin Films[J]. Journal of University of Electronic Science and Technology of China, 2007, 36(4): 660-662,669.
Citation: ZHANG De-yin, HUANG Da-gui, LI Jin-hua, DAN Di-di, DONG Zheng. Substrate Effects on Preparation of LiTaO3 Thin Films[J]. Journal of University of Electronic Science and Technology of China, 2007, 36(4): 660-662,669.
shu

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