Volume 31 Issue 2
Jan.  2018
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Chen Shukai, Lin Gang, Wu Jianhua, Yan Bicheng. Study on About the Circuit of 4 Values NOT Gate and NAND Gate[J]. Journal of University of Electronic Science and Technology of China, 2002, 31(2): 136-140.
Citation: Chen Shukai, Lin Gang, Wu Jianhua, Yan Bicheng. Study on About the Circuit of 4 Values NOT Gate and NAND Gate[J]. Journal of University of Electronic Science and Technology of China, 2002, 31(2): 136-140.

Study on About the Circuit of 4 Values NOT Gate and NAND Gate

  • Received Date: 2001-12-25
  • Publish Date: 2002-04-15
  • The circuits 4-Value TTL NOT gate and NAND gate, which designed using bipolar transistor, have better I/O character, stronger energy of load and noise immunity, their noise margin may reach ±0.6 V. Especially, the circuit of NAND gate my be totally made by NPN transistor, and the circuit structure is simple, easily is complicated by Integrate Circuit. The circuits introduced in this paper is useful, may be used in basic cell circuit of 4-Value Digital System, Artificial Neural Network and Fuzzy Logical System.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Study on About the Circuit of 4 Values NOT Gate and NAND Gate

Abstract: The circuits 4-Value TTL NOT gate and NAND gate, which designed using bipolar transistor, have better I/O character, stronger energy of load and noise immunity, their noise margin may reach ±0.6 V. Especially, the circuit of NAND gate my be totally made by NPN transistor, and the circuit structure is simple, easily is complicated by Integrate Circuit. The circuits introduced in this paper is useful, may be used in basic cell circuit of 4-Value Digital System, Artificial Neural Network and Fuzzy Logical System.

Chen Shukai, Lin Gang, Wu Jianhua, Yan Bicheng. Study on About the Circuit of 4 Values NOT Gate and NAND Gate[J]. Journal of University of Electronic Science and Technology of China, 2002, 31(2): 136-140.
Citation: Chen Shukai, Lin Gang, Wu Jianhua, Yan Bicheng. Study on About the Circuit of 4 Values NOT Gate and NAND Gate[J]. Journal of University of Electronic Science and Technology of China, 2002, 31(2): 136-140.

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