X波段宽带幅相多功能芯片设计

Design of X-Band Wideband Multi-Function Chip with Phase and Amplitude Control

  • 摘要: 为了降低相控阵天线T/R组件的尺寸和成本,提高集成度,该文基于0.5 μm GaAs pHEMT工艺,设计了一款X波段宽带幅相多功能芯片。芯片在架构设计方面除了集成传统的6位数字移相器、6位数字衰减器、单刀双掷开关和驱动放大器以外,新引入了2位数字延时器,实现了收发通道的幅相与时延的独立控制和单芯片集成,改善了宽带相控阵应用中的波束色散。在幅相特性方面,采用高低通移相网络和开关型衰减拓扑,实现平坦的移相、衰减特性,并有效降低了寄生调幅和附加相移。实测结果表明:8~12 GHz工作频带内,64态移相均方根(RMS)误差小于3.5°,寄生调幅RMS小于0.3 dB;64态衰减RMS误差小于0.4 dB,附加相移RMS小于2.5°;延时器延时误差小于1.5 ps。芯片尺寸为5.0 mm×3.5 mm。

     

    Abstract: An X-band multi-function chip(MFC) with phase and amplitude control is designed and fabricated in 0.5 μm GaAs pHEMT technology, which can significantly improve the integration of transmit/receive (T/R) radar module. The MFC consists of a 2-bit true time delay(TTD), a 6-bit digital phase shifter, a 6-bit digital attenuator and two drive amplifiers. In terms of architecture design, a 2-bit TTD is introduced at the first time to achieve wideband operation while lowering beam squinting, and realizing the independent control of amplitude, phase and time delay on a single chip. The high-low pass phase shifting network and switch-path-type attenuation topology are employed in order to achieve high-precision phase and amplitude performance. The measurement results show that the RMS phase and amplitude error of 64-state phase shifter is 3.5° and 0.3 dB max, the RMS amplitude and phase error of 64-state attenuator is less than 0.4 dB and 2.5°, and the delay error of 3-state TTD is less than 1.5 ps over the 8 GHz to 12 GHz frequency band. The chip size is 5.0 mm×3.5 mm including the test pads.

     

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