CMOS环型压控振荡器的设计

Design of CMOS Ring Voltage Controlled Oscillator

  • 摘要: 设计和分析了一种高稳定度、低噪声的CMOS环型压控振荡器。该电路具有较低的压控增益,较好的线性范围,较低的相位噪声。应用复制偏置电路,对差分环型压控振荡器的控制电压进行复制,通过对压控振荡器相位噪声的计算和分析,以提高对环型压控振荡器电源电压噪声和衬底噪声的抑制。该设计和分析是基于上华0.5 μmCMOS工艺,当控制电压从1~3 V变化时,相应的振荡频率为100~500 MHz;在偏离中心频率1 kHz、10 kHz、100 kHz和1 MHz频率处得到的相位噪声分别为?50 dBc/Hz、?75 dBc/Hz、?98 dBc/Hz和?120 dBc/Hz。

     

    Abstract: A high stability and low noise CMOS ring voltage-controlled oscillator (VCO) is designed and analyzed based on the CSMC 0.5μm process. Replica-biased circuit technique is adopted to suppress the noise from VDD and substrate. The analysis shows that the VCO can achieve better linear voltage-frequency characteristic and lower phase noise: when VCO control voltage varies from 1 V to 3 V, the turning range changes from 100 MHz to 500 MHz, meanwhile the phase noise are ?50 dBc/Hz, ?75 dBc/Hz, ?98 dBc/Hz, and ?120 dBc/Hz at an offset of 1 kHz, 10 kHz, 100 kHz, and 1 MHz from oscillator centre frequency, respectively.

     

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