LTE/WiMAX片上变压器的分析与设计

Analysis and Design of On-Chip Transformers for LTE/WiMAX

  • 摘要: 针对TSMC 0.13m RF CMOS射频和混合信号工艺器件库中无变压器器件,而变压器器件是设计射频通信电路的关键,该器件的有无直接影响射频通信前端电路性能的优劣. 通过对多种片上变压器的性能研究,设计出应用于LTE/WiMAX的八边形片上变压器,给出了与频率无关的集总元器件等效电路模型及模型参数提取公式,并对新器件进行了流片,测试结果表明在0.1~10GHz频率范围内L、Q参数具有良好的吻合性,且耦合系数K良好,达到设计目的. 该变压器的设计成功将有助于4G通信芯片的开发和应用.

     

    Abstract: Transformer is a key device in radio frequency communication circuit, which can directly effect on the performance of the RF front-end circuit. However, there is not transformer in TSMC 0.13m RF CMOS mixed-signal process library. In order to solve this problem, an octagonal transformer which is applied in LTE/WiMAX is designed and fabricated by the analysis of all kinds of on-chip transformer performance, and the frequency-independent lumped-element equivalent circuit model and the parameter-extracted expressions are given. The measurement results show that L and Q have excellent agreement with the measured data from the frequency range of 0.1GHz to 10GHz, and coupling coefficient K is perfect. The successful design of the transformer will contribute to the development and application of 4G communication chips.

     

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