Abstract: The contradiction between higher reverse breakdown voltage and lower conduction resistance is important for power semiconductor devices. Using Super-Junction structure as the voltage support layer can weaken this contradiction. In this paper, a super-junction Schottky barrier diode (SJ-SBD), in which a SJ structure was used as the voltage support layer, was designed and fabricated. The SJ layer which is composed of alternant P-pillar and N-pillar was formed through four times N-type epitaxy and four times P-type implant. SJ-SBD and traditional SBD With the same thickness of drift layer were implemented. And the impurity concentration of P-pillar and N-pillar in SJ layer was the same as that of the drift layer in SBD. The tested results showed that the maximum reverse breakdown voltages are 110 V for traditional SBD and 229 V for SJ-SBD. It is indicated that using the SJ structure as the drift layer could increase the reverse breakdown voltage and reduce the conduction resistance obviously. And the breakdown voltage of SJ-SBD was the maximal when total charge in N-pillar and P-pillar was equal.