基于信息论的高容错非对称MRF电路的供电电压分析

Supply Voltage Analysis of Asymmetry-Based MRF Circuits via Information Theory

  • 摘要: 信息论是通信系统研究的基本数学方法,现有研究多是从信息论的角度对称等效电路模型进行能耗下界方面的分析,鲜有文献面向非对称电路模型开展信息传递对其容错性和供电电压关系进行研究。该文用信息论对非对称数字电路的可靠性和供电电压分析方法进行研究,并以新型超低功耗高容错马尔可夫(MRF)电路为切入点,通过4个关于熵、条件熵、和互信息的定理证明,得出了MRF电路的供电电压下界并且证明出其结构拥有较传统数字电路更低的电压下界。这些分析工作为非对称MRF电路的设计和研究提供了理论基础。

     

    Abstract: Information theory is the mathematic foundation for communication systems. The existing researches focus on low energy consumption bound analysis with the equivalent model of the symmetry circuits from the view point of information theory, and there are few works which focus on the analysis of the relationship among the information transmission, the reliability, and the supply voltage for the asymmetry circuits. The main contribution of this paper provides an analysis methodology for the reliability and supply voltage of asymmetry-based digital circuits with information theory. We use the new Markov random field (MRF) circuits, which can achieve ultra low power and high fault tolerance, as the analysis case. We demonstrate that the low supply voltage bound of MRF circuits is lower than that of traditional CMOS circuits through the proof of four lemmas of entropy, conditional entropy, and mutual information. This work can provide a theoretical basis for the research and design of the asymmetry-based MRF.

     

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