真空微电子三极管与四极管的模拟计算

基金项目:

电子部预研基金

详细信息

Simulation of Vacuum-microelectronics microtriodes and microtetrodes

摘要: 对真空微电子三极管、四极管进行了计算机模拟。模拟结果显示了发射电流与场致增强因于依赖表面的尖端半径、尖端高度等几何因素,并对微四极管的特性进行了分析。最后将微电子三极管与实验结果进行了比较,得到若干实用的结论。
- 真空微电子 /
- 场致发射 /
- 计算机模拟 /
- 福勒-诺德海姆公式
Abstract: By meas of computer simulation, the characteristics of field emission microtriodes and microtetrodes are investigates in detail. The computed results show that the emitted current and the field enhancement depend upon geometrical factors, such as tip sharpness, tip height and so on. To compare the experiment, a lot of praticable results are obtained.
- vacuum-microelectronics /
- field emission /
- computer simulation /
- Fowler-Nordheim equation