LI Jiacheng, LIU Shuang, WU Shenglan, LIU Yong, ZHONG Zhiyong. A Self-Formed Silicon Surface Microstructure: Surface Characterization and Potential Applications[J]. Journal of University of Electronic Science and Technology of China, 2024, 53(2): 180-184. DOI: 10.12178/1001-0548.2022206
Citation: LI Jiacheng, LIU Shuang, WU Shenglan, LIU Yong, ZHONG Zhiyong. A Self-Formed Silicon Surface Microstructure: Surface Characterization and Potential Applications[J]. Journal of University of Electronic Science and Technology of China, 2024, 53(2): 180-184. DOI: 10.12178/1001-0548.2022206

A Self-Formed Silicon Surface Microstructure: Surface Characterization and Potential Applications

  • The morphology of hydrogenated amorphous silicon (a-Si: H) films grown by plasma enhanced chemical vapor deposition (PECVD) is studied. Nonuniformly distributed bubble defects are formed during the process of a-Si: H films deposited on crystalline silicon substrate. The SiNx/a-Si alternative layers are deposited on the as-prepared a-Si: H film, a perfect dome-shaped multi-shell microstructure was formed at the site of the blister defect, and no distinct structural collapse was observed. Three unique characters of the self-formed dome-shape microstructure are concluded, and the potential applications of the proposed self-formed dome-shape microstructure in nanophotonics and MEMS are also pointed out.
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