Design of New Level Shifter
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Graphical Abstract
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Abstract
A new level shifter with high driving current and low static power consumption is proposed. It makes use of reverse characteristic of diode and positive feedback to generate reliable driving signal for NMOS and PMOS transistor respectively. The level shifter is fabricated in CSMC 0.5 μm CMOS technology .The measured result shows that the circuit has the function of level shift and high conversion speed.
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