Experiment Study of Ni/4H-SiC Schottky Diode Ionization Radiation Detector

The Ni/4H-SiC Schottky diode ionization radiation detector was fabricated and measured with different radiation sources. Under radiation from 63Ni and gamma-ray, the detectors show sensitive current response. After 1 Mrad(Si) gamma-ray radiation, the signal current has no obvious degradation. After 1 Mrad(Si) gamma-ray and 100 Mrad(Si) electron radiation respectively, the dark current of detectors under different radiation bias voltage has slightly degradation. The resluts show that Ni/4H-SiC Schottky diode ionization radiation detector has low dark current, high sensitivity and high radiation hardness and can be applied in high radiation environment for a long time.