Effect of MoO₃ Buffer Layer on the Performance of Organic Thin Film Transistor

High field effect mobility (μ) organic thin film transistor (OTFT) was fabricated by using MoO3 buffer layer between organic semiconductor (pentacene) and source/drain electrodes (Ag). The hole mobility of OTFT reached 0.26 cm2/Vs and output current IDS achieved more than 50 μA when the gate voltage was 40 V. The detailed effect of MoO3 buffer layer was analyzed via output characteristics and physical mechanism.