SHI Zhi-yuan, WANG Chun-li, BAO Bo-cheng, FENG Fei. Characteristic Analysis and Experimental Verification for Meminductor Equivalent Circuit[J]. Journal of University of Electronic Science and Technology of China, 2014, 43(6): 845-849. DOI: 10.3969/j.issn.1001-0548.2014.06.009
Citation: SHI Zhi-yuan, WANG Chun-li, BAO Bo-cheng, FENG Fei. Characteristic Analysis and Experimental Verification for Meminductor Equivalent Circuit[J]. Journal of University of Electronic Science and Technology of China, 2014, 43(6): 845-849. DOI: 10.3969/j.issn.1001-0548.2014.06.009

Characteristic Analysis and Experimental Verification for Meminductor Equivalent Circuit

  • Meminductor, extended from the notion of memristor, is a novel nonlinear circuit element with memory function. Based on the model of meminductor approximate equivalent circuit and by utilizing an active flux-controlled memristor to realize the memristor in the equivalent circuit, a state equation set of the meminductor approximate equivalent circuit is established. With the help of MATLAB mathematical tool software, the properties of the equivalent meminductor are analyzed numerically. The results indicate that the flux-current relations of the equivalent meminductor typically behave as a pinched hysteresis loop characteristics and depend on the frequencies of applied voltage stimulus. By using the equivalent circuit of active flux-controlled memristor, the experimental verification for meminductor approximate equivalent circuit is performed. The experimental measurement results agree essentially with numerical simulation results, which illustrate that the model of meminductor approximate equivalent circuit is effective.
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