GE Qi-han, DENG Hong, CHEN Hang, XU Zi-qiang. Property Research of ZnO:Al Thin Films with Different Proportion of Al3+ Doping[J]. Journal of University of Electronic Science and Technology of China, 2006, 35(2): 253-256.
Citation: GE Qi-han, DENG Hong, CHEN Hang, XU Zi-qiang. Property Research of ZnO:Al Thin Films with Different Proportion of Al3+ Doping[J]. Journal of University of Electronic Science and Technology of China, 2006, 35(2): 253-256.

Property Research of ZnO:Al Thin Films with Different Proportion of Al3+ Doping

  • ZnO:Al (ZAO) thin films with different proportion of Al3+ doping are prepared by sol-gel method. XRD, AFM, ultraviolet-visible spectroscope meter and the method of four-explorwtion-needle are adopted to test the property of ZAO thin films. Through analysis and comparison, hereinafter phenomena can be obtained:ZAO thin films prepared by sol-gel method has polycrystalline hexagonal wurtzite structure, the surface of the ZAO thin films is flat, the crystal is very thickness and symmetry. The conductivity can be improved by Al3+ doping. The transmittance in ultraviolet-visible region is higher than 80% with hypo-Al3+ doping, accompanying the phenomena of Burstein moving. The transmittance increases indistinctively, but the phenomena of burstein moving is aggravating, the most amount of Burstein moving measure up to 340 nm.
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