LI Ze-hong, ZHANG Lei, Tan Kai-zhou. Total Dose Radiation Hardened Power VDMOS Device[J]. Journal of University of Electronic Science and Technology of China, 2008, 37(4): 621-623.
Citation: LI Ze-hong, ZHANG Lei, Tan Kai-zhou. Total Dose Radiation Hardened Power VDMOS Device[J]. Journal of University of Electronic Science and Technology of China, 2008, 37(4): 621-623.
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Total Dose Radiation Hardened Power VDMOS Device

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  • A total dose radiation hardened power VDMOS device is fabricated by growing the thin gate SiO2 after the P-body diffusion and using a double passivation layer (Si3N4-SiO2). The experimental results are presented and fit 2D simulation. For the specified power VDMOS device, the threshold voltage shifts is only -1 V at a x-ray total dose of 972×103 rad (Si). It is demonstrated that the total dose radiation tolerance of the power VDMOS device are improved significantly.
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