WU Zhi-ming, HUANG Ying, Lü Jian, WANG Liang, LI Su. High PSRR COMS Bandgap Voltage Reference[J]. Journal of University of Electronic Science and Technology of China, 2008, 37(3): 453-456.
Citation: WU Zhi-ming, HUANG Ying, Lü Jian, WANG Liang, LI Su. High PSRR COMS Bandgap Voltage Reference[J]. Journal of University of Electronic Science and Technology of China, 2008, 37(3): 453-456.

High PSRR COMS Bandgap Voltage Reference

  • A bandgap voltage reference circuit using 0.5 μm complementary metal oxide semiconductor transistor (CMOS) N-well process is presented in the paper. The circuit has high power supply rejection ratio (PSRR) and low-temperature coefficient. The bias voltages of core circuit is independent to the power supply voltage, and the whole bandgap circuit has high PSRR through adding the power supply to the operational amplifier of which the output voltage is supplied for the core circuit. The simulation results for this circuit using SPECTRE show that the PSRR is 116 dB, the temperature coefficient from -40℃ to 85℃ temperature range is 46 ppm/℃ and the power consumption is only 1.45 mW. The bandgap discussed in this paper can be widely used in ADC, DAC, reference circuit and so on.
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