High Efficient Doped Red Organic Light-Emitting Diodes Based on 9,10-di-beta-Naphthylanthracene

Due to the common problems such as low efficiency of red organic electroluminescence (EL) devices, considerable improvement in devices performance has been achieved by optimizing doped emitting materials. High efficient doped red organic light-emitting diodes (OLEDs) were investigated by 9,10-di-betanaphthylanthracene (AND) via thermal vacuum deposition method. Red organic EL devices with the structure of ITO/NPB/ADN:AlQ (20%):DCJTB(2%)/AlQ/Mg:Ag/Al had red light-emission with CIE coordinates of (0.59, 0.41), Maximum luminance of 3 000 cd/m2, and maximum luminance efficiency of 2.54 lm/W. The peak of EL spectrum of the device locates at 598 nm.