SUN Jia-e, CHEN Jun-ning, KE Dao-ming, DAI Yue-hua, XU Chao. Polysilicon Quantization and Its Effects on MOSFET'S Threshold Voltage[J]. Journal of University of Electronic Science and Technology of China, 2006, 35(6): 967-969,984.
Citation: SUN Jia-e, CHEN Jun-ning, KE Dao-ming, DAI Yue-hua, XU Chao. Polysilicon Quantization and Its Effects on MOSFET'S Threshold Voltage[J]. Journal of University of Electronic Science and Technology of China, 2006, 35(6): 967-969,984.
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Polysilicon Quantization and Its Effects on MOSFET'S Threshold Voltage

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  • Based on the approximation for the charge distribution, by solving poisson equations, this paper found the distributions of electric field and electrostatic potential. Then the shift of threshold voltages due to polysilicon quantization with different polysilicon doping concentrations is calculated. The calculated results are compared with the numerical simulation results.
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