Yu Qi, Yang Mohua, Li Jingchun, Wang Xiangzhan, Xiao Haiyan. Design and Fabrication of a Low-Noise CMOS Charge Sensitive Amplifier[J]. Journal of University of Electronic Science and Technology of China, 2003, 32(2): 146-148,163.
Citation: Yu Qi, Yang Mohua, Li Jingchun, Wang Xiangzhan, Xiao Haiyan. Design and Fabrication of a Low-Noise CMOS Charge Sensitive Amplifier[J]. Journal of University of Electronic Science and Technology of China, 2003, 32(2): 146-148,163.

Design and Fabrication of a Low-Noise CMOS Charge Sensitive Amplifier

  • A new design of low-noise low-power consumption charge sensitive amplifier is presented. Simulated by EDA software Cadence, the results obtained are satisfied. The DC open-loop gain is 82.9 dB with a 28 kHz -3 dB bandwidth and its phase margin is 46.9°. The maximum output noise spectral density is 1.5 μV/Hz2 at very low frequency. Using standard 3mm P-Well CMOS technology, the proposed amplifier is fabricated, and the measurement results are closed to the simulation.
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