Lin Weitao, Ruan Chengli, Yang Hongchun. Experiment Investigation of Ultra-Short Electrical Pulse Generated by InP:Fe Photoconductive Semiconductor Switches[J]. Journal of University of Electronic Science and Technology of China, 2003, 32(6): 649-651.
Citation: Lin Weitao, Ruan Chengli, Yang Hongchun. Experiment Investigation of Ultra-Short Electrical Pulse Generated by InP:Fe Photoconductive Semiconductor Switches[J]. Journal of University of Electronic Science and Technology of China, 2003, 32(6): 649-651.

Experiment Investigation of Ultra-Short Electrical Pulse Generated by InP:Fe Photoconductive Semiconductor Switches

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  • Received Date: August 28, 2003
  • In this paper,2mm-gap and 3mm-gap lateral high resistive InP:Fe Photoconductive semiconductor switches are fabricated.These switches are triggered by nano-second and pico-second laser pulse. Experiment are given out and a fast time,narrow pulse duration and stable performance waveform is received.This experiment not only can be applied in Ultra-wideband signal's generation but also supplies important reference for the theory investigation.
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