Numerical Analysis of High Speed SOI-LIGBT

He ion implantation localized lifetime control SOI lateral insulated gate bipolar transistor (SOI-LIGBT) is proposed in this paper,which can effectively raise the turn-off speed of devices,which is compatibles with integrated circuit process.It is demonstrated by numerical simulation that the tf~VF trade-off is superior to the devices using unlocalized lifetime control,the forward on-state voltage can be reduced by 0.6-1.4 V at the same turn-off speed,and it can avoid the snap-back phenomena of anode-short structure.