Yang Cunyu, Huang Jingyuan, Yang Zhonghai. Simulation of Vacuum-microelectronics microtriodes and microtetrodes[J]. Journal of University of Electronic Science and Technology of China, 1999, 28(1): 62-65.
Citation:
Yang Cunyu, Huang Jingyuan, Yang Zhonghai. Simulation of Vacuum-microelectronics microtriodes and microtetrodes[J]. Journal of University of Electronic Science and Technology of China, 1999, 28(1): 62-65.
Yang Cunyu, Huang Jingyuan, Yang Zhonghai. Simulation of Vacuum-microelectronics microtriodes and microtetrodes[J]. Journal of University of Electronic Science and Technology of China, 1999, 28(1): 62-65.
Citation:
Yang Cunyu, Huang Jingyuan, Yang Zhonghai. Simulation of Vacuum-microelectronics microtriodes and microtetrodes[J]. Journal of University of Electronic Science and Technology of China, 1999, 28(1): 62-65.
Simulation of Vacuum-microelectronics microtriodes and microtetrodes
By meas of computer simulation, the characteristics of field emission microtriodes and microtetrodes are investigates in detail. The computed results show that the emitted current and the field enhancement depend upon geometrical factors, such as tip sharpness, tip height and so on. To compare the experiment, a lot of praticable results are obtained.
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