Wang Enxin, Deng Hong, Jiang Bin. Resistance-temperature Characteristics of Doped Relaxor Ferroelectric CeramicsJ. Journal of University of Electronic Science and Technology of China, 1999, 28(2): 136-140.
Citation:
Wang Enxin, Deng Hong, Jiang Bin. Resistance-temperature Characteristics of Doped Relaxor Ferroelectric CeramicsJ. Journal of University of Electronic Science and Technology of China, 1999, 28(2): 136-140.
Wang Enxin, Deng Hong, Jiang Bin. Resistance-temperature Characteristics of Doped Relaxor Ferroelectric CeramicsJ. Journal of University of Electronic Science and Technology of China, 1999, 28(2): 136-140.
Citation:
Wang Enxin, Deng Hong, Jiang Bin. Resistance-temperature Characteristics of Doped Relaxor Ferroelectric CeramicsJ. Journal of University of Electronic Science and Technology of China, 1999, 28(2): 136-140.
Resistance-temperature Characteristics of Doped Relaxor Ferroelectric Ceramics
The ferroelectrics and relaxor ferroelectrics are discussed. It is believed that the solid solutions of barium strontium titanate and lead strontium titanate by conventional process are doped relaxor ferroelectrics. The Heywang's double Schottky barrier model is introduced to explain their U-type resistance-temperature characteristics.
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