Yang Peifeng, Li Kaicheng, Liu Daoguang. A Epitaxial Technology for Si1-xGex/Si Materials[J]. Journal of University of Electronic Science and Technology of China, 1999, 28(5): 490-493.
Citation:
Yang Peifeng, Li Kaicheng, Liu Daoguang. A Epitaxial Technology for Si1-xGex/Si Materials[J]. Journal of University of Electronic Science and Technology of China, 1999, 28(5): 490-493.
Yang Peifeng, Li Kaicheng, Liu Daoguang. A Epitaxial Technology for Si1-xGex/Si Materials[J]. Journal of University of Electronic Science and Technology of China, 1999, 28(5): 490-493.
Citation:
Yang Peifeng, Li Kaicheng, Liu Daoguang. A Epitaxial Technology for Si1-xGex/Si Materials[J]. Journal of University of Electronic Science and Technology of China, 1999, 28(5): 490-493.
Key technologies such as no oxygen epitaxial surface etc. are reported for manufacturing SiGe/Si by MBE,with which both intrinsic and doping Si1-xGex/Si have been realised.In this paper, the experiments show that the components and electrical parameters of the material fit theoretical foreseeing well.which is applied and made up of Si1-xGex/Si-PMOS (x=0. 1 8).
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