Preparation of InSb Thin Films by Vacuum Evaporation and Fabrication of Hall Element

InSb thin films are prepared by the vacuum evaporation method which has an evaporation source. The dependence of the election mobility on substrate temperature and thickness of the thin films are investigated. The electron mobility of 4×104 cm2/V·s at room temperature for InSb thin film is obtained.The input and output resistance for the InSb thin film Hall element fabricated are 200~500 Ω, and sensitivity is in the range of 90~150 V/A·T.