Two Dimension Numerical Analysis of High Speed IGBT

The high speed insulated gate bipolar transistor(IGBT) transport model is derived by ambipolar transport theory in this paper.In the steady state,it opreates as the common IGBT;but in the transient state,it's turm-off time is much smaller than the common IGBT because of the extraction of non-equilibrium carriers in the base region caused by N+ anode.In this paper the steady and transient state characteristics of the high speed IGBT are analyzed by the use of two-dimension device numerical simulator(PISCES ⅡB).The insight physical parameters such as the concertration distribution,current prfiles,and the trun-off time(Toff) are acquired.Simulation results are in agreement with the experiments.