Li Yan, Luo Jiahui. Investigation on Photoelectric Properties of Polycrystal Telluret Thin Films by Vacuum Deposition[J]. Journal of University of Electronic Science and Technology of China, 1997, 26(4): 394-397.
Citation: Li Yan, Luo Jiahui. Investigation on Photoelectric Properties of Polycrystal Telluret Thin Films by Vacuum Deposition[J]. Journal of University of Electronic Science and Technology of China, 1997, 26(4): 394-397.

Investigation on Photoelectric Properties of Polycrystal Telluret Thin Films by Vacuum Deposition

  • Telluret thin films are prepared by sintering and the vacuum evaporation techniques.The effects of fabrication enviroments on the characteristics of CdTe thin films are developed and the experimental results show that the thin films fabricated at about 130℃ substrate temperature have obviously optoelectronic effects and the band gap of CdTe thin films is about 1.63 eV at room temperature.The substrates of CdTe thin films are determined by X ray diffratograms.
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