Chen Yong, Zhong Ling. Analysis and Parameters Extraction of Deep Submicrometre MOS Device Model BSIM2[J]. Journal of University of Electronic Science and Technology of China, 1997, 26(5): 487-491.
Citation:
Chen Yong, Zhong Ling. Analysis and Parameters Extraction of Deep Submicrometre MOS Device Model BSIM2[J]. Journal of University of Electronic Science and Technology of China, 1997, 26(5): 487-491.
Chen Yong, Zhong Ling. Analysis and Parameters Extraction of Deep Submicrometre MOS Device Model BSIM2[J]. Journal of University of Electronic Science and Technology of China, 1997, 26(5): 487-491.
Citation:
Chen Yong, Zhong Ling. Analysis and Parameters Extraction of Deep Submicrometre MOS Device Model BSIM2[J]. Journal of University of Electronic Science and Technology of China, 1997, 26(5): 487-491.
Analysis and Parameters Extraction of Deep Submicrometre MOS Device Model BSIM2
A deep submicrometre MOS device model BSIM2 is analyzed in this paper.Based on the discussion of physical effects of short channel devices,a nMOSFET with channel length 1 μm and gate oxides thick ness 25 nm is measured and its BSIM2 parameters are extracted.The results are analyzed,which show that BSIM2 is one of the important tools for VLSI/ULSI design.
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