Zhou Hongren, Liu Xiurong, Xu Peina. Resistance Film of Platinum by D.C.Magnetron Sputtering[J]. Journal of University of Electronic Science and Technology of China, 1997, 26(6): 662-665.
Citation: Zhou Hongren, Liu Xiurong, Xu Peina. Resistance Film of Platinum by D.C.Magnetron Sputtering[J]. Journal of University of Electronic Science and Technology of China, 1997, 26(6): 662-665.

Resistance Film of Platinum by D.C.Magnetron Sputtering

  • The main factors effecting on TCR of the platinum resistance film are studied in this paper on the basis of film theory and experiments,the high purity of material Pt,suitable thickness of depositing film,(normally is near 1/μm)and the crystallization degree after high temperature treatment.#br#The TCR of platinum resistance film,whose thickness is 800 nm,sputtered on high alumina ceramic or microcrystal glass substrate,is 3.850×10-3/℃ after high tempenature heat-treatment for 1 hour.
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