Experimental Study of Hot-electron Degradation of MOS Device by Electron Radiation

Based on the analysis of the hot-electron effect and radiation effect on the interface state production of MOSFET,a method of using general linear electron accelerator to study the hot-electron degradation of MOSFET is given.The results of using this method upon the hot-electron degradation of 1 μm nMOSFET are reproted and the relation between the hot-electron degradation and the applied voltates is discussed.A method to determine the MOSFET lifetime of hot-electron degradation quickly and easily is obtained.