MoO<sub>3</sub>源漏电极缓冲层对有机薄膜晶体管性能的影响

MoO₃源漏电极缓冲层对有机薄膜晶体管性能的影响

摘要: 以并五苯(pentacene)作为有机薄膜晶体管(OTFTs)的载流子传输层,采用比常用金电极(Au)廉价的Ag作为源漏电极,在pentacene与Ag之间添加MoO3超薄层作为缓冲层,制备了具有较高场效应迁移率(μ)的晶体管器件。结果表明,器件在栅极电压VG为40 V时,传输电流IDS超过了50 μA,空穴迁移率达到0.26 cm2/Vs。同时,从器件的输出特性与物理机制分析了MoO3缓冲层在器件中的作用。

Abstract: High field effect mobility (μ) organic thin film transistor (OTFT) was fabricated by using MoO3 buffer layer between organic semiconductor (pentacene) and source/drain electrodes (Ag). The hole mobility of OTFT reached 0.26 cm2/Vs and output current IDS achieved more than 50 μA when the gate voltage was 40 V. The detailed effect of MoO3 buffer layer was analyzed via output characteristics and physical mechanism.