TPBTSi配合物的绿色有机发光器件研究
Study of Green Organic Light-Emitting Diodes Based on TPBTSi Chelate
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摘要: 利用2,2,3,3-tetraphenyl-4,4-bisthienylsilole (TPBTSi)作为发光材料,采用真空镀膜的方法制备双层器件ITO/N,bis (1-naphthyl)(1,1'-biphenyl)-4,4'-diamine (NPB)/TPBTSi/Mg:Ag;在此基础上,利用N'-diphenyl-N,N'-tri-(8-hydroxyquinoline) aluminum (Alq3)作为电子传输材料,以TPBTSi为发光层制备了结构为ITO/NPB/TPBTSi/Alq3/Mg:Ag的三层有机发光器件。结果表明,与双层器件相比,三层器件的发光性能得到很大提高,发光光谱谱峰位于516 nm处,即TPBTSi的特征光谱,CIE坐标为(0.275,0.448),且不随电压的改变而变化。在15 V的驱动电压下,器件的最大亮度和流明效率分别为7 032 cd/m2和0.79 lm/W。Abstract: Using a novel chelate 2,2,3,3-tetraphenyl-4,4-bisthienylsilole (TPBTSi) as emissive material and Alq3 as eletron transporting material, a triple layer organic light-emitting device was fabricated using convetional vaccum deposition method. The device structure is:ITO/N,N'-Diphenyl-N, N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'-diamine (NPB)/TPBTSi/tri-(8-hydroxyquinoline)-aluminum (Alq3)/Mg:Ag. The peak of electroluminescence (EL) spectrum locates at 516 nm, which is the spectrum of TPBTSi. The commissions internationale l'eclairage (CIE) coordinates are (0.275,0.448 8), which are independent on the variation of bias voltage. Under the bias voltage of 15 V, the maximum luminance and luminance efficiency are 7 032 cd/m2 and 0.79 lm/W, respectively.