TPBTSi配合物的绿色有机发光器件研究

Study of Green Organic Light-Emitting Diodes Based on TPBTSi Chelate

    摘要
  • 摘要: 利用2,2,3,3-tetraphenyl-4,4-bisthienylsilole (TPBTSi)作为发光材料,采用真空镀膜的方法制备双层器件ITO/N,bis (1-naphthyl)(1,1'-biphenyl)-4,4'-diamine (NPB)/TPBTSi/Mg:Ag;在此基础上,利用N'-diphenyl-N,N'-tri-(8-hydroxyquinoline) aluminum (Alq3)作为电子传输材料,以TPBTSi为发光层制备了结构为ITO/NPB/TPBTSi/Alq3/Mg:Ag的三层有机发光器件。结果表明,与双层器件相比,三层器件的发光性能得到很大提高,发光光谱谱峰位于516 nm处,即TPBTSi的特征光谱,CIE坐标为(0.275,0.448),且不随电压的改变而变化。在15 V的驱动电压下,器件的最大亮度和流明效率分别为7 032 cd/m2和0.79 lm/W。

     

    Abstract: Using a novel chelate 2,2,3,3-tetraphenyl-4,4-bisthienylsilole (TPBTSi) as emissive material and Alq3 as eletron transporting material, a triple layer organic light-emitting device was fabricated using convetional vaccum deposition method. The device structure is:ITO/N,N'-Diphenyl-N, N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'-diamine (NPB)/TPBTSi/tri-(8-hydroxyquinoline)-aluminum (Alq3)/Mg:Ag. The peak of electroluminescence (EL) spectrum locates at 516 nm, which is the spectrum of TPBTSi. The commissions internationale l'eclairage (CIE) coordinates are (0.275,0.448 8), w