ADN掺杂的高效率红光有机电致发光器件的制备

High Efficient Doped Red Organic Light-Emitting Diodes Based on 9,10-di-beta-Naphthylanthracene

摘要: 针对目前红光有机电致发光器件普遍存在效率低的缺点,以9,10-di-beta-naphthylanthracene (AND)为主体材料,利用真空蒸镀双掺杂的方法,制备了基于ADN的结构为ITO/N,N'-Di-(1-naphthalenyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamineNPB/ADN:AlQ (20%):DCJTB (2%)/AlQ/Mg:Ag/Al的红光掺杂器件。测试结果表明该器件亮度可以达到3 000 cd/m2,EL光谱的峰值为598 nm,色纯度CIE坐标为(0.59,0.41),最大流明效率为2.54 lm/W,比AlQ为单一主体材料的红光掺杂器件性能有很大的提高。

Abstract: Due to the common problems such as low efficiency of red organic electroluminescence (EL) devices, considerable improvement in devices performance has been achieved by optimizing doped emitting materials. High efficient doped red organic light-emitting diodes (OLEDs) were investigated by 9,10-di-betanaphthylanthracene (AND) via thermal vacuum deposition method. Red organic EL devices with the structure of ITO/NPB/ADN:AlQ (20%):DCJTB(2%)/AlQ/Mg:Ag/Al had red light-emission with CIE coordinates of (0.59, 0.41), Maximum luminance of 3 000 cd/m2, and maximum luminance efficiency of 2.54 lm/W. The peak of EL spectrum of the device locates at 598 nm.