碳纳米管薄膜的制备及处理对场发射特性的影响

Synthesis of CNTs Film and Influence of Treatment of CNTs Film on Field Emission Properties

摘要: 采取直接在硅片上真空蒸镀NiCr合金作为催化剂,用化学气相沉积法制备了碳纳米管薄膜。并采用H2等离子体球处理碳纳米管薄膜,测试其场发射特性,并与未经处理的碳纳米管薄膜进行了比较,得到碳纳米管薄膜开启场强有所降低,为1~1.2 V/μm。对碳纳米管薄膜进行老炼处理,最大场发射电流由12.3 μA提高到34 μA。

Abstract: In this paper, NiCr alloy was vaporized on the silicon in vacuum as the catalyzer and synthesized Carbon NanoTubes (CNTs) film using chemical vapour deposition. We treated CNTs film with H2 plasma and measured the field emission characteristic of CNTs film. CNTs film's turn on fields was 1~1.2 V/μm and had obviously reduced compared with that not treated. The most field emission current was increased 34 μA from 12.3 μA after annealed.