Abstract: The granular films of Fe-Si-O with different volume fraction x were fabricated by RF co-sputtering method. The microstructure, magnetic and transport properties, and Giant Hall Effect (GHE) were studied systematically. In room temperature and magnetic field of 1.3 Tesla, the maximum GHE value of 18.5 μΩ·cm was obtained at the volume fraction of 0.52. The origin of this giant Hall Effect is contributed to 3d local electron-electron interaction. The annealing temperature under 300℃, the saturated Hall resistivity of the Fe0.52(SiO2)0.48 granular film does no decrease much. Namely, the sample has good thermal stability, which implies that this sample may be considered as a magnetic field sensor for operating temperatures below 300℃.