4H-SiC离子注入层的欧姆接触的制备

Fabrication of Ohmic Contacts to 4H-SiC Created by Ion-Implantation

摘要: 用氮离子注入的方法制备了4H-SiC欧姆接触层。注入层的离子浓度分布由蒙特卡罗分析软件TRIM模拟提取,Si面4H-SiC-Ni/Cr合金欧姆接触的特性由传输线方法结构进行了测量,得到氮离子注入层的方块电阻Rsh为30 kΩ/square,Ni/Cr合金与离子注入层的欧姆接触电阻ρc为7.1×10-4Ωcm2。

Abstract: Doping by nitrogen ion-implantation is used to fabricate the Ohmic contacts of 4H-SiC. The implantation depth profile is simulated with the Monte Carlo simulator TRIM. Ni/Cr/Si-face 4H-SiC Ohmic contacts are measured by Transfer Length Method structures. The result for sheet resistance Rsh of the implanted layers is 30 kΩ/square. The specific contact resistances ρc of Ohmic contacts is 7.1×10-4 Ωcm2.