高速IGBT的二维数值分析

Two Dimension Numerical Analysis of High Speed IGBT

  • 摘要: 借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。稳态时,其工作原理与普通IGBT完全相同,但瞬态时,由于N+阳极对基区非平衡载流子的抽出作用,使其关断速度比普通IGBT大大提高。文中利用二维器件数值分析软件(PISCES-IB)对其稳态和瞬态工作特性进行了详细的模拟分析,获得了其工作时的浓度分布、电流分布等内部物理参数,并得到了它的关断时间Toff,其模拟结果与实验值比较吻合。

     

    Abstract: The high speed insulated gate bipolar transistor(IGBT) transport model is derived by ambipolar transport theory in this paper.In the steady state,it opreates as the common IGBT;but in the transient state,it's turm-off time is much smaller than the common IGBT because of the extraction of non-equilibrium carriers in the base region caused by N+ anode.In this paper the steady and transient state characteristics of the high speed IGBT are analyzed by the use of two-dimension device numerical simulator(PISCES ⅡB).The insight physical parameters such as the concertration distribution,current prfiles,and the trun-off time(Toff) are acquired.Simulation results are in agreement with the experiments.

     

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