Abstract: The high speed insulated gate bipolar transistor(IGBT) transport model is derived by ambipolar transport theory in this paper.In the steady state,it opreates as the common IGBT;but in the transient state,it's turm-off time is much smaller than the common IGBT because of the extraction of non-equilibrium carriers in the base region caused by N+ anode.In this paper the steady and transient state characteristics of the high speed IGBT are analyzed by the use of two-dimension device numerical simulator(PISCES ⅡB).The insight physical parameters such as the concertration distribution,current prfiles,and the trun-off time(Toff) are acquired.Simulation results are in agreement with the experiments.