真空蒸发碲化物薄膜光电性能的研究
Investigation on Photoelectric Properties of Polycrystal Telluret Thin Films by Vacuum Deposition
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摘要: 采用高温烧结和真空蒸发制备了CdTe光敏薄膜,探讨了制备工艺对CdTe薄膜性能和结构的影响,说明了在基片温度为130℃左右下制备的CdTe薄膜具有明显的光敏特性,并得到CdTe材料的禁带宽度为1.63eV。利用X衍射对不同基片温度下制备的CdTe薄膜材料进行了结构分析,发现基片温度为130℃左右时制备的CdTe薄膜具有明显的衍射峰。Abstract: Telluret thin films are prepared by sintering and the vacuum evaporation techniques.The effects of fabrication enviroments on the characteristics of CdTe thin films are developed and the experimental results show that the thin films fabricated at about 130℃ substrate temperature have obviously optoelectronic effects and the band gap of CdTe thin films is about 1.63 eV at room temperature.The substrates of CdTe thin films are determined by X ray diffratograms.