Abstract: In the process of preparing Ta/Al alloy resistance thin films with DC co-sputtering,the influence of the main technological parameters such as -target substrate distance,gas pressure,sputtering voltage and heat-treatment time etc.on the temperature coefficient of resistance (TCR) of the films is investigated.The methods of square-error analysis and orthogonal experiment are suggested for obtaining optimal process condition and TCR of the films.The results show that Ta/Al alloy thin films with ideal TCR characteristic can be prepared,as long as the four part main technological parameter is selected and controlled properly.At the same time,the effectiveness of the method of square-error analysis is proved.