深亚微米MOS器件模型BSIM2及其参数提取

Analysis and Parameters Extraction of Deep Submicrometre MOS Device Model BSIM2

摘要: 详细分析了适用于VLSI/ULSI设计的深亚微米BSIM2MOS器件模型,并在深入讨论短沟道MOS器件物理效应的基础上,对沟道长1μm栅氧化层厚度25nm的nMOSFET进行了测试和BSIM2模型参数的提取,且对结果进行了分析和讨论。结果表明,BSIM2具有精确、参数易提取、计算速度快的特点,是VLSI/ULSI模拟设计的重要工具之一。

Abstract: A deep submicrometre MOS device model BSIM2 is analyzed in this paper.Based on the discussion of physical effects of short channel devices,a nMOSFET with channel length 1 μm and gate oxides thick ness 25 nm is measured and its BSIM2 parameters are extracted.The results are analyzed,which show that BSIM2 is one of the important tools for VLSI/ULSI design.