Abstract: The Ta/Al alloy film containing Al 50% at.has an excellent resistive performance.The film is deposited by DC co-sputtering from tantalum cathode,45% of which is covered with area of aluminum discs.The influence of technological parameters such as sputtering pressure,sputtering voltage and heat-treatment conditions etc.on the properties of the film is explored.The results show that the Ta/Al alloy film can be used for stable power resistor or resistive network.