MOS器件热电子退化的电子辐射实验研究

Experimental Study of Hot-electron Degradation of MOS Device by Electron Radiation

摘要: 在分析热电子效应与辐射效应在MOSFET产生界面态关系的基础上,给出了采用普通电子直线加速器作辐射源来对MOS器件热电子退化效应进行研究的方法和采用该方法对1μm工艺N沟MOSFET进行热电子退化效应的研究结果,并对热电子退化与偏置的关系进行了讨论,得到了确定热电子退化寿命的快速而简便的方法。

Abstract: Based on the analysis of the hot-electron effect and radiation effect on the interface state production of MOSFET,a method of using general linear electron accelerator to study the hot-electron degradation of MOSFET is given.The results of using this method upon the hot-electron degradation of 1 μm nMOSFET are reproted and the relation between the hot-electron degradation and the applied voltates is discussed.A method to determine the MOSFET lifetime of hot-electron degradation quickly and easily is obtained.