二硫化钼反相器的高效干法转移与性能测试

Fast Prototyping and Characterization of MoS2 Inverter Enabled by Dry Transfer

  • 摘要: 提出了一种利用干法转移制备的二硫化钼反相器并对其进行了性能研究。其中,反相器的核心结构由二硫化钼异质结晶体管和电阻串联组成,石墨烯则作为该器件的电极材料。为了提高二硫化钼晶体管和反相器的电学性能,利用热蒸镀金法优化石墨烯电极与基底测试电极(Pad)之间的接触特性。研究发现,器件经过优化之后得到的二硫化钼晶体管的开关比(ION/IOFF) 最大超过105;二硫化钼反相器的增益大于6,展示出典型的逻辑反相特性。结果表明,干法转移技术在二维晶体管、反相器及逻辑电路的制备和应用中极具潜力。

     

    Abstract: In this work, we report the fabrication and characterization of an MoS2 inverter by a dry transfer method, where the inverter consists of an MoS2 transistor and an MoS2 resistor connected in series with graphene flakes serving as electrodes. To improve the electrical performance of the MoS2 transistor and invertor, we utilize thermal evaporation (Au) through a stencil mask to improve the contact quality between the graphene electrodes and metal electrodes on the substrate. Upon such enhancement, we find that the MoS2 transistor exhibits an ION/IOFF > 105; the MoS2 inverter shows a typical logic-conversion feature with voltage gain > 6. Our work demonstratesthat the dry transfer technique has great potential in the preparation and application of two-dimensional transistors, inverters and logic circuits.

     

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