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Hydrogenated amorphous silicon (a-Si: H) films have a wide range of practical applications, particularly in mirco-electromechanical system (MEMS), photovoltaic and photodetection. And plasma enhanced chemical vapor deposition (PECVD) is generally used as the deposition method of a-Si: H films for enabling large area deposition and high-quality film. Previous studies have demonstrated the fact of surface morphology of the PECVD-deposited a-Si film related to the substrate material[1-6]. Ref. [1] reported that smooth a-Si film without hillocks is formed on the 100 nm oxide/Si substrate while a rough surface with many hillocks is formed on the crystalline Si substrate. Ref. [2] discussed the influence of the PECVD parameters on the surface roughness of a-Si: H film, and the optimized deposition conditions to suppress the formation of gas bubbles in thick a-Si: H film deposited on silicon substrate. Ref. [3] considered some strategies to mitigate the formation of those micro-bubbles, and found a dramatic improvement in surface roughness quality in their experiment. In addition, some works have demonstrated that bubble defects are also formed on a-Si film after the process of annealing, which is resulted from the accumulation of hydrogen molecules on the film-substrate interface as hydrogen diffused from the film[4-6]. Previous works on the surface morphology of the PECVD-deposited a-Si film mainly focused on the bubble defects’ formation mechanism and the corresponding suppression methods, but ignored the potential applications of this kind of self-formed surface microstructure.
In this paper, we prepared a-Si: H film on crystalline silicon substrate, with nonuniformly distributed bubbles observed on the surface, which is consistent with the results in previous literatures. The latest advance in micro- and nano-fabrication lies in self-assembly or self-organization techniques[7-9], but to the best of our knowledge, few reports on this kind of novel self-formed technique. This technique has advantages in easier process and lower cost, indicates a high feasibility and a good prospect in the field of nanophotonics and MEMS.
A Self-Formed Silicon Surface Microstructure: Surface Characterization and Potential Applications
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摘要: 采用等离子体增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition, PECVD)制备掺氢非晶硅膜,并对其表面结构学进行研究。该文发现在晶体硅衬底上沉积非晶硅薄膜时,会在表面形成非均匀分布的起泡缺陷。在已制备的非晶硅薄膜上进一步沉积了氮化硅/非晶硅的交替层,在起泡缺陷原位形成了一个完美的穹顶多壳的微结构,并且没有明显的结构坍塌。该文总结了自成形穹顶微结构的3个独特的结构特性,并进一步指出了该自成形穹顶微结构在纳米光学和微机电系统中的潜在应用。Abstract: The morphology of hydrogenated amorphous silicon (a-Si: H) films grown by plasma enhanced chemical vapor deposition (PECVD) is studied. Nonuniformly distributed bubble defects are formed during the process of a-Si: H films deposited on crystalline silicon substrate. The SiNx/a-Si alternative layers are deposited on the as-prepared a-Si: H film, a perfect dome-shaped multi-shell microstructure was formed at the site of the blister defect, and no distinct structural collapse was observed. Three unique characters of the self-formed dome-shape microstructure are concluded, and the potential applications of the proposed self-formed dome-shape microstructure in nanophotonics and MEMS are also pointed out.
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Key words:
- MEMS /
- amorphous silicon films /
- blister defect /
- self-formed /
- silicon micro/nanostructures
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